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Is Charge-Transfer Doping Possible at the Interfaces of Monolayer VSe2 with MoO3 and K?
journal contribution
posted on 2019-11-08, 19:47 authored by Lei Zhang, Xiaoyue He, Kaijian Xing, Wen Zhang, Anton Tadich, Ping Kwan Johnny Wong, Dong-Chen Qi, Andrew T. S. WeeBeing
a metallic transition-metal dichalcogenide, monolayer vanadium
diselenide (VSe2) exhibits many novel properties, such
as charge density waves and magnetism. Its interfaces with other materials
can potentially be used in device applications as well as for manipulating
its intrinsic properties. Here, we present a scanning tunneling microscopy
and synchrotron-based X-ray photoemission spectroscopy study of the
surface charge-transfer doping using efficient electron-withdrawing
and electron-donating materials, that is, molybdenum trioxide (MoO3) and potassium (K), on the molecular beam epitaxy-grown monolayer
VSe2 on highly oriented pyrolytic graphite (HOPG). We demonstrate
that monolayer VSe2 is immune to MoO3- and K-doping
effects. However, at the monolayer edges where the local chemical
reactivity is higher because of Se deficiency, MoO3 is
seen to react with VSe2 to form molybdenum dioxide (MoO2) and vanadium dioxide (VO2). Compared to the obvious
charge-transfer doping effects of MoO3 and K on HOPG, the
electronic structure of monolayer VSe2 is barely perturbed.
This is attributed to the large density of states at the Fermi level
of monolayer VSe2 carrying the metallic character. This
work provides new insights into the chemical and electronic properties
of monolayer VSe2, important for future VSe2-based electronic device design.
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monolayer vanadium diselenidebeam epitaxy-grown monolayer VSe 2synchrotron-based X-ray photoemission spectroscopy studyMonolayer VSe 2monolayer VSe 2scanning tunneling microscopyHOPGcharge-transfer doping effectsfuture VSe 2MoO 3form molybdenum dioxideVOVSe 2charge density wavessurface charge-transfer doping
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