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High Performance n-Type Field-Effect Transistors Based on Indenofluorenedione and Diindenopyrazinedione Derivatives
journal contribution
posted on 2008-04-22, 00:00 authored by Tomohiro Nakagawa, Daisuke Kumaki, Jun-ichi Nishida, Shizuo Tokito, Yoshiro YamashitaHigh Performance n-Type Field-Effect Transistors Based on Indenofluorenedione and Diindenopyrazinedione Derivatives