Ultrathin
Topological Insulator Absorber: Unique Dielectric
Behavior of Bi2Te3 Nanosheets Based on Conducting Surface States
Posted on 2019-08-31 - 02:29
Topological
insulators exhibit great potential in the fields of
electronics and semiconductors for their gapless surface states. Intriguingly,
most topological insulators are possibly excellent microwave-absorbing
materials because of easy adjustment of electrical transport based
on conducting surface states in the nanostructure. Herein, topological
insulator Bi2Te3 nanosheets are synthesized
by a simple solvothermal method. The material demonstrates a unique
dielectric behavior based on conducting surface states, resulting
in excellent microwave-absorbing performance. Benefiting from the
outstanding impedance matching, Bi2Te3 nanosheets
exhibit an ultrathin microwave absorption with the qualified frequency
bandwidth of 3.0 GHz at only 0.77 mm thickness, which is thinner than
other absorbers in reported references. Moreover, a strong reflection
loss of −41 dB at 0.8 mm is achieved. The result provides a
new approach for developing ultrathin microwave absorption materials
at the submillimeter scale.
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Tang, Min; Zhang, Jun-Ying; Bi, Song; Hou, Zhi-Ling; Shao, Xiao-Hong; Zhan, Ke-Tao; et al. (2019). Ultrathin
Topological Insulator Absorber: Unique Dielectric
Behavior of Bi2Te3 Nanosheets Based on Conducting Surface States. ACS Publications. Collection. https://doi.org/10.1021/acsami.9b13775