Submicron
Size Schottky Junctions on As-Grown Monolayer
Epitaxial Graphene on Ge(100): A Low-Invasive Scanned-Probe-Based
Study
Posted on 2019-09-11 - 18:33
We
report on the investigation of the Schottky barrier (SB) formed
at the junction between a metal-free graphene monolayer and Ge semiconductor
substrate in the as-grown epitaxial graphene/Ge(100) system.
In order to preserve the heterojunction properties, we defined submicron
size graphene/Ge junctions using the scanning probe microscopy lithography
in the local oxidation configuration, a low-invasive processing approach
capable of inducing spatially controlled electrical separations among
tiny graphene regions. Characteristic junction parameters were estimated
from I–V curves obtained
using conductive-atomic force microscopy. The current–voltage
characteristics showed a p-type Schottky contact behavior, ascribed
to the n-type to p-type conversion of the entire Ge substrate due
to the formation of a large density of acceptor defects during the
graphene growth process. We estimated, for the first time, the energy
barrier height in the as-grown graphene/Ge Schottky junction (φB ≈ 0.45 eV) indicating an n-type doping of the graphene
layer with a Fermi level ≈ 0.15 eV above the Dirac point. The
SB devices showed ideality factor values around 1.5 pointing to the
high quality of the heterojunctions.
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Pea, Marialilia; De Seta, Monica; Di Gaspare, Luciana; Persichetti, Luca; Scaparro, Andrea Maria; Miseikis, Vaidotas; et al. (2019). Submicron
Size Schottky Junctions on As-Grown Monolayer
Epitaxial Graphene on Ge(100): A Low-Invasive Scanned-Probe-Based
Study. ACS Publications. Collection. https://doi.org/10.1021/acsami.9b09681
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AUTHORS (8)
MP
Marialilia Pea
MD
Monica De Seta
LD
Luciana Di Gaspare
LP
Luca Persichetti
AS
Andrea Maria Scaparro
VM
Vaidotas Miseikis
CC
Camilla Coletti
AN
Andrea Notargiacomo
KEYWORDS
p-type Schottky contact behavioroxidation configurationgraphene regionsgraphene layerlow-invasive processing approachmetal-free graphene monolayerCharacteristic junction parametersgraphene growth processscanning probe microscopy lithographyLow-Invasive Scanned-Probe-Based Studyacceptor defectsenergy barrier heightp-type conversionheterojunction propertiesSubmicron Size Schottky JunctionsAs-Grown Monolayer Epitaxial GrapheneSchottky barriern-type dopingideality factor valuesconductive-atomic force microscopyDirac pointGe semiconductor substrate inSB devicesGe substrate