Stability
of Chemically Doped Nanotube–Silicon Heterojunction Solar Cells:
Role of Oxides at the Carbon–Silicon
Interface
Posted on 2019-08-06 - 12:34
Heterojunctions of
carbon nanotubes interfaced with silicon and doped with AuCl3 can achieve attractive power conversion efficiencies when operated
in the photovoltaic regime; however, the cost and long-term stability
of such devices must be improved before they could become commercially
viable. Here, we investigate the role of chemical treatment of the
carbon nanotube/silicon interface with either SOCl2 or
HNO3, prior to AuCl3 doping, on the stability
of the photovoltaic devices. We find that while both treatments initially
lead to similar device performance, devices treated with HNO3 are significantly more stable. Using X-ray photoemission spectroscopy,
we demonstrate that pretreatment with the powerful organic oxidant
SOCl2 generates a variety of low-oxidation-state silicon
species at the nanotube–silicon interface that are not generated
by exposure to HNO3. These species and their evolution
over time are implicated in the reduced device stability, highlighting
the importance of silicon oxidation states in determining the stability
of carbon nanotube–silicon photovoltaic devices.
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Tune, Daniel D.; Shirae, Hiroyuki; Lami, Vincent; Headrick, Robert J.; Pasquali, Matteo; Vaynzof, Yana; et al. (2019). Stability
of Chemically Doped Nanotube–Silicon Heterojunction Solar Cells:
Role of Oxides at the Carbon–Silicon
Interface. ACS Publications. Collection. https://doi.org/10.1021/acsaem.9b01050