Hydrogen-Assisted Epitaxial Growth of Monolayer Tungsten
Disulfide and Seamless Grain Stitching
Version 2 2018-01-02, 21:04
Version 1 2018-01-02, 19:20
Posted on 2018-01-02 - 21:04
Recently,
research on transition metal dichalcogenides (TMDCs)
has been accelerated by the development of large-scale synthesis based
on chemical vapor deposition (CVD). However, in most cases, CVD-grown
TMDC sheets are composed of randomly oriented grains, and thus contain
many distorted grain boundaries (GBs) which deteriorate the physical
properties of the TMDC. Here, we demonstrate the epitaxial growth
of monolayer tungsten disulfide (WS2) on sapphire by introducing
a high concentration of hydrogen during the CVD process. As opposed
to the randomly oriented grains obtained in conventional growth, the
presence of H2 resulted in the formation of triangular
WS2 grains with the well-defined orientation determined
by the underlying sapphire substrate. Photoluminescence of the aligned
WS2 grains was significantly suppressed compared to that
of the randomly oriented grains, indicating a hydrogen-induced strong
coupling between WS2 and the sapphire surface that has
been confirmed by density functional theory calculations. Scanning
transmission electron microscope observations revealed that the epitaxially
grown WS2 has less structural defects and impurities. Furthermore,
sparsely distributed unique dislocations were observed between merging
aligned grains, indicating an effective stitching of the merged grains.
This contrasts with the GBs that are observed between randomly oriented
grains, which include a series of 8-, 7-, and alternating 7/5-membered
rings along the GB. The GB structures were also found to have a strong
impact on the chemical stability and carrier transport of merged WS2 grains. Our work offers a novel method to grow high-quality
TMDC sheets with much less structural defects, contributing to the
future development of TMDC-based electronic and photonic applications.
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Ji, Hyun Goo; Lin, Yung-Chang; Nagashio, Kosuke; Maruyama, Mina; Solís-Fernández, Pablo; Sukma Aji, Adha; et al. (2018). Hydrogen-Assisted Epitaxial Growth of Monolayer Tungsten
Disulfide and Seamless Grain Stitching. ACS Publications. Collection. https://doi.org/10.1021/acs.chemmater.7b04149
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AUTHORS (10)
HJ
Hyun Goo Ji
YL
Yung-Chang Lin
KN
Kosuke Nagashio
MM
Mina Maruyama
PS
Pablo Solís-Fernández
AS
Adha Sukma Aji
VP
Vishal Panchal
SO
Susumu Okada
KS
Kazu Suenaga
HA
Hiroki Ago