High
Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene
Derivative
Posted on 2018-03-13 - 13:37
Combining high charge
carrier mobility with ambipolar transport in light-absorbing organic
semiconductors is highly desirable as it leads to enhanced charge
photogeneration, and hence improved performance, in various optoelectronic
devices including solar cells and photodetectors. Here we report the
development of [6,6]-phenyl-C61-butyric acid methyl ester
(PC61BM)-based ultraviolet (UV) phototransistors with balanced
electron and hole transport characteristics. The latter is achieved
by fine-tuning the source–drain electrode work function using
a self-assembled monolayer. Opto/electrical characterization of as-prepared
ambipolar PC61BM phototransistors reveals promising photoresponse,
particularly in the UV-A region (315–400 nm), with a maximum
photosensitivity and responsivity of 9 × 103 and 3
× 103 A/W, respectively. Finally, the temporal response
of the PC61BM phototransistors is found to be high despite
the long channel length (10 s of μm) with typical switching
times of <2 ms.
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Huang, Wentao; Lin, Yen-Hung; Anthopoulos, Thomas D. (2018). High
Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene
Derivative. ACS Publications. Collection. https://doi.org/10.1021/acsami.8b00121
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AUTHORS (3)
WH
Wentao Huang
YL
Yen-Hung Lin
TA
Thomas D. Anthopoulos
KEYWORDS
ambipolar transportHigh Speed Ultraviolet Phototransistorsself-assembled monolayerUV-Acharge carrier mobilityμ mcharge photogenerationUVAmbipolar Fullerenebutyric acid methyl esterhole transport characteristicsPC 61 BM phototransistorsoptoelectronic devicesas-prepared ambipolar PC 61 BM phototransistors