High-Performance
Ultraviolet-to-Infrared Broadband Perovskite Photodetectors Achieved
via Inter-/Intraband Transitions
Posted on 2017-10-17 - 11:18
A high-performance
vertically injected broadband UV-to-IR photodetector based on Gd-doped
ZnO nanorods (NRs)/CH3NH3PbI3 perovskite
heterojunction was fabricated on metal substrates. Our perovskite-based
photodetector is sensitive to a broad spectral range, from ultraviolet
to infrared light region (λ = 250–1357 nm). Such structure
leads to a high photoresponsivity of 28 and 0.22 A/W, for white light
and IR illumination, respectively, with high detectivity values of
1.1 × 1012 and 9.3 × 109 Jones. Optical
characterizations demonstrate that the IR detection is due to intraband
transition in the perovskite material. Metal substrate boosts carrier
injection, resulting in higher responsivity compared to the conventional
devices grown on glass, whereas the presence of Gd increases the ZnO
NRs performance. For the first time, the perovskite-based photodetector
is demonstrated to extend its detection capability to IR (>1000
nm) with high room temperature responsivity across the detected spectrum,
leading to a high-performance ingenious cost-effective UV-to-IR broadband
photodetector design for large-scale applications.
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Alwadai, Norah; Haque, Md Azimul; Mitra, Somak; Flemban, Tahani; Pak, Yusin; Wu, Tom; et al. (2017). High-Performance
Ultraviolet-to-Infrared Broadband Perovskite Photodetectors Achieved
via Inter-/Intraband Transitions. ACS Publications. Collection. https://doi.org/10.1021/acsami.7b09705
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AUTHORS (7)
NA
Norah Alwadai
MH
Md Azimul Haque
SM
Somak Mitra
TF
Tahani Flemban
YP
Yusin Pak
TW
Tom Wu
IR
Iman Roqan
KEYWORDS
High-Performance Ultraviolet-to-Infrared Broadband Perovskite Photodetectors Achievedperovskite-based photodetectorbroadband UV-to-IR photodetectormetal substrate boosts carrier injectiondetectionUV-to-IR broadband photodetector designroom temperature responsivityGd-doped ZnO nanorodsNHZnO NRs performancenm