High-Performance
Quantum-Dot Light-Emitting Transistors
Based on Vertical Organic Thin-Film Transistors
Posted on 2019-09-22 - 20:03
In
this work, a novel vertical quantum-dot light-emitting transistor
(VQLET) based on a vertical organic thin-film transistor is successfully
fabricated. Benefiting from the new vertical architecture, the VQLET
is able to afford an extremely high current density, which allows
most of the organic thin film transistors (OTFT) even with low mobility
(for instance, poly(3-hexylthiophene)) to drive a quantum-dot light-emitting
diode (QLED), which was previously unavailable. Moreover, the hole
injection barrier could be modulated by the additional gate electrode,
which precisely optimizes the charge balance in the device, a critical
issue in QLED, resulting in the precise control of current density
and brightness of the VQLET. The VQLET shows a high performance with
a maximum current efficiency of 37 cd/A. Furthermore, integrating
OTFT and QLED into a single device, the VQLET features drastic advantages
by realizing active matrix quantum-dot light-emitting diodes (AMQLEDs),
which significantly reduces the number of transistors and frees the
large area fraction occupied by transistors. Hence, these results
indicate that the VQLET provides a new strategy for realizing a low-cost,
solution-processed, high-performance OTFT-AMQLED for the flat panel
display technology. Moreover, the novel design offers a unique method
to exquisitely control the charge balance and maximize the efficiency
the QLED.
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Chen, Qizhen; Yan, Yujie; Wu, Xiaomin; Lan, Shuqiong; Hu, Daobing; Fang, Yuan; et al. (2019). High-Performance
Quantum-Dot Light-Emitting Transistors
Based on Vertical Organic Thin-Film Transistors. ACS Publications. Collection. https://doi.org/10.1021/acsami.9b11198