Electrical Properties and Oxygen Stoichiometry of Ba1–xSrxTiO3−δ Ceramics
Version 2 2017-12-14, 20:44
Version 1 2017-12-14, 20:42
Posted on 2017-12-14 - 20:44
Ba1–xSrxTiO3 solid
solutions prepared by a solid-state reaction in air at 1200–1400
°C, followed by slow cooling to room temperature at the end of
the reaction, were essentially oxygen-stoichiometric and p-type. Their
conductivity increased reversibly when either p(O2) in the surrounding atmosphere was increased or a dc bias
as small as 1 V was applied across the samples. The enhanced p-type
conductivity is attributed to the creation of mobile holes on underbonded
oxide ions. The same samples quenched from >∼1400 °C
were increasingly oxygen deficient and n-type. They showed reduced
conductivity with either a dc bias or increased p(O2), attributed to the trapping of mobile electrons.
These materials provide a rare example of a switch between n-type
and p-type conductivity, in the same material, linked to oxygen stoichiometry
variation. In both n- and p-type materials, the samples responded
to external stimuli in a way similar to that of a leaky capacitor;
polarization processes at sample surfaces led first to charge storage
and second to a reversible change in bulk electrical properties.
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Guo, Mei; Masó, Nahum; Liu, Yang; West, Anthony R. (2017). Electrical Properties and Oxygen Stoichiometry of Ba1–xSrxTiO3−δ Ceramics. ACS Publications. Collection. https://doi.org/10.1021/acs.inorgchem.7b01827
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AUTHORS (4)
MG
Mei Guo
NM
Nahum Masó
YL
Yang Liu
AW
Anthony R. West