Diffusion-Controlled
Faradaic Charge Storage in High-Performance Solid Electrolyte-Gated
Zinc Oxide Thin-Film Transistors
Posted on 2018-03-07 - 16:55
An electrochemical device capable of manifesting reversible charge storage at the interface
of an active layer offers formidable advantages, such as low switching
energy and long retention time, in realizing synaptic behavior for
ultralow power neuromorphic systems. Contrary to a supercapacitor-based
field-effect device that is prone to low memory retention due to fast
discharge, a solid electrolyte-gated ZnO thin-film device exhibiting
a battery-controlled charge storage mechanism via mobile charges at
its interface with tantalum oxide is demonstrated. Analysis via cyclic
voltammetry and chronoamperometry uniquely distinguishes the battery
behavior of these devices, with an electromotive force generated due
to polarization of charges strongly dependent on the scan rate of
the applied voltage. The Faradaic-type diffusion-controlled charge
storage mechanism exhibited by these devices is capable of delivering
robust enhancement in the channel conductance and leads to a superior
ON–OFF ratio of 108–109. The nonvolatile
behavior of the interface charge storage and slow diffusion of ions
is utilized in efficiently emulating spike timing-dependent plasticity
(STDP) at similar time scales of biological synapses and unveils the
possibility of STDP behavior using multiple in-plane gates that alleviate
additional requirement of waveform-shaping circuits.
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Balakrishna Pillai, Premlal; Kumar, Ashwani; Song, Xiaoyao; De Souza, Maria Merlyne (2018). Diffusion-Controlled
Faradaic Charge Storage in High-Performance Solid Electrolyte-Gated
Zinc Oxide Thin-Film Transistors. ACS Publications. Collection. https://doi.org/10.1021/acsami.7b14768
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AUTHORS (4)
PB
Premlal Balakrishna Pillai
AK
Ashwani Kumar
XS
Xiaoyao Song
MD
Maria Merlyne De Souza
KEYWORDS
waveform-shaping circuitscyclic voltammetryDiffusion-Controlled Faradaic Charge Storageretention timecharge storageElectrolyte-Gated Zinc Oxide Thin-Film Transistorselectrochemical deviceelectrolyte-gated ZnO thin-film deviceultralow power neuromorphic systemsnonvolatile behaviorscan rateSTDP behaviorchannel conductancememory retentionspike timing-dependent plasticitybattery behaviorsynaptic behaviorelectromotive forceFaradaic-type diffusion-controlled charge storage mechanismtime scalesin-plane gatesbattery-controlled charge storage mechanisminterface charge storagetantalum oxidesupercapacitor-based field-effect device