Correlating Crack Onset Strain and Cohesive Fracture
Energy in Polymer Semiconductor Films
Posted on 2017-10-23 - 19:35
Polymer
semiconductors are an attractive material system for flexible
and stretchable electronic devices owing to their potentially favorable
mechanical attributes. Establishing the thermomechanical behavior
of polymer semiconductors is thus an important consideration to ensure
successful operation in these applications. One of the most common
mechanical characterization methods for these materials is to manipulate
the thin films while on an elastomer substrate. A primary measurement
with this approach is the film’s crack onset strain (COS),
a measure of ductility. It is simple and effective; however, it is
a highly qualitative view of film mechanical stability, particularly
in flexible device applications. Alternatively, cohesive fracture
energy (Gc) provides a direct quantitative
measure of the mechanical integrity of the film. While fracture energy
provides important insight into mechanical stability, it typically
requires a more complex measurement method than the film on elastomer
tests. Here, we compare the COS using film on elastomer testing, with
cohesive fracture energy measured using four-point bending for a range
of polymer semiconductor films. The polymers considered have a range
of molecular structures and molecular packing characteristics providing
a broad representative sample set. The values of Gc ranged from 0.4 to 18 J/m2 while COS ranged
from 2% to over 100%. We show that COS of the films can be correlated
with Gc providing support that COS is
a valuable measurement to probe the mechanical toughness of polymer
semiconductor films. We also discuss the physical characteristics
each measurement highlights and the complementary nature of these
measurements.
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Balar, Nrup; O’Connor, Brendan T. (2017). Correlating Crack Onset Strain and Cohesive Fracture
Energy in Polymer Semiconductor Films. ACS Publications. Collection. https://doi.org/10.1021/acs.macromol.7b01282
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