Controlled
Doping of GeV and SnV Color Centers in
Diamond Using Chemical Vapor Deposition
Posted on 2020-06-16 - 18:04
Group IV color centers
in diamond (Si, Ge, Sn, and Pb) have recently
emerged as promising candidates for realization of scalable quantum
photonics. However, their synthesis in nanoscale diamond is still
in its infancy. In this work we demonstrate controlled synthesis of
selected group IV defects (Ge and Sn) into nanodiamonds and nanoscale
single crystal diamond membranes by microwave plasma chemical vapor
deposition. We take advantage of inorganic salts to prepare the chemical
precursors that contain the required ions that are then incorporated
into the growing diamond. Photoluminescence measurements confirm that
the selected group IV emitters are present in the diamond without
degrading its structural quality. Our results are important to expand
the versatile synthesis of color centers in diamond.
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Westerhausen, Mika T.; Trycz, Aleksandra T.; Stewart, Connor; Nonahal, Milad; Regan, Blake; Kianinia, Mehran; et al. (2020). Controlled
Doping of GeV and SnV Color Centers in
Diamond Using Chemical Vapor Deposition. ACS Publications. Collection. https://doi.org/10.1021/acsami.0c07242
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AUTHORS (7)
MW
Mika T. Westerhausen
AT
Aleksandra T. Trycz
CS
Connor Stewart
MN
Milad Nonahal
BR
Blake Regan
MK
Mehran Kianinia
IA
Igor Aharonovich