Control
of Synaptic Plasticity Learning of Ferroelectric Tunnel Memristor
by Nanoscale Interface Engineering
Version 2 2018-04-04, 17:52
Version 1 2018-04-04, 16:34
Posted on 2018-04-04 - 17:52
Brain-inspired
computing is an emerging field, which intends to extend the capabilities
of information technology beyond digital logic. The progress of the
field relies on artificial synaptic devices as the building block
for brainlike computing systems. Here, we report an electronic synapse
based on a ferroelectric tunnel memristor, where its synaptic plasticity
learning property can be controlled by nanoscale interface engineering.
The effect of the interface engineering on the device performance
was studied. Different memristor interfaces lead to an opposite virgin
resistance state of the devices. More importantly, nanoscale interface
engineering could tune the intrinsic band alignment of the ferroelectric/metal–semiconductor
heterostructure over a large range of 1.28 eV, which eventually results
in different memristive and spike-timing-dependent plasticity (STDP)
properties of the devices. Bidirectional and unidirectional gradual
resistance modulation of the devices could therefore be controlled
by tuning the band alignment. This study gives useful insights on
tuning device functionalities through nanoscale interface engineering.
The diverse STDP forms of the memristors with different interfaces
may play different specific roles in various spike neural networks.
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Guo, Rui; Zhou, Yaxiong; Wu, Lijun; Wang, Zhuorui; Lim, Zhishiuh; Yan, Xiaobing; et al. (2018). Control
of Synaptic Plasticity Learning of Ferroelectric Tunnel Memristor
by Nanoscale Interface Engineering. ACS Publications. Collection. https://doi.org/10.1021/acsami.8b01469
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AUTHORS (18)
RG
Rui Guo
YZ
Yaxiong Zhou
LW
Lijun Wu
ZW
Zhuorui Wang
ZL
Zhishiuh Lim
XY
Xiaobing Yan
WL
Weinan Lin
HW
Han Wang
HY
Herng Yau Yoong
SC
Shaohai Chen
A
Ariando
TV
Thirumalai Venkatesan
JW
John Wang
GC
Gan Moog Chow
AG
Alexei Gruverman
XM
Xiangshui Miao
YZ
Yimei Zhu
JC
Jingsheng Chen