Cluster-Type
Filaments Induced by Doping in Low-Operation-Current
Conductive Bridge Random Access Memory
Posted on 2020-06-17 - 13:53
Conductive
bridge random access memory (CBRAM) is one of the most
representative emerging nonvolatile memories in virtue of its excellent
performance on speed, high-density integration, and power efficiency.
Resistive switching behaviors in CBRAM involving the formation/rupture
of metallic conductive filaments are dominated by cation migration
and redox processes. It is all in the pursuit to decrease the operation
current for low-power consumption and to enhance the current compliance-dependent
reliability. Here, we propose a novel structure of Pt/TaOx:Ag/TaOx/Pt with nonvolatile
switching at ∼1 μA and achieve a five-resistance-state
multilevel cell operation under different compliance currents. Different
from the nanocone-shaped filaments reported in traditional Ag top
electrode devices, cluster-type filaments were captured in our memory
devices, explaining the low-operation current-resistive switching
behaviors. Meanwhile, Cu-doped counterpart devices also display similar
operations. Such memory devices are more inclined to achieve low-power
consumption and offer feasibility to large-scale memory crossbar integration.
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Sun, Yiming; Song, Cheng; Yin, Siqi; Qiao, Leilei; Wan, Qin; Liu, Jialu; et al. (2020). Cluster-Type
Filaments Induced by Doping in Low-Operation-Current
Conductive Bridge Random Access Memory. ACS Publications. Collection. https://doi.org/10.1021/acsami.0c07238
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AUTHORS (9)
YS
Yiming Sun
CS
Cheng Song
SY
Siqi Yin
LQ
Leilei Qiao
QW
Qin Wan
JL
Jialu Liu
RW
Rui Wang
FZ
Fei Zeng
FP
Feng Pan
KEYWORDS
cluster-type filamentsnonvolatile memoriescell operationaccess memoryoffer feasibilityPtnanocone-shaped filamentsmemory crossbar integrationcompliance currentspower efficiencyconductive filamentsconsumptionnovel structurecompliance-dependent reliabilitycation migrationCu-doped counterpart deviceslow-operation current-resistiveelectrode devicesSuch memory devicesLow-Operation-Current Conductive Bridge Random Access Memory Conductive bridgeredox processesmemory devicesCBRAMAgCluster-Type Filaments Induced