Chemical Vapor Deposition of MoS2 for Energy
Harvesting: Evolution of the Interfacial Oxide Layer
Posted on 2020-06-25 - 17:18
The growth of two-dimensional
(2D) materials directly on the substrates
that are relevant to device fabrication is crucial for their large-area
production and application. This is because their production via transfer
processes not only increases the costs but, more importantly, induces
contamination and mechanical defects in the transferred material.
The presence of a dielectric interface layer and the control of its
thickness in transistors and p–n heterojunctions are essential
aspects in the semiconductor industry. In the present work, MoS2 flakes and films with thicknesses down to the monolayer limit
were grown using chemical vapor deposition (CVD) on Si substrates
covered with a native oxide layer. The high quality of the as-grown
MoS2 resting on a flat SiO2 surface was documented
by a combination of atomic force microscopy, optical spectroscopy,
including tip-enhanced photoluminescence spectroscopy, and photoelectron
microspectroscopy methods. The changes of the interfacial oxide were
then interrogated using spectroscopic imaging ellipsometry and X-ray
photoelectron spectroscopy, both with micrometer scale resolution,
to show the increase of the oxide layer thickness by several nanometers
during the heating and MoS2 growth processes. Our results
evidence the possibility of growing high-quality MoS2 directly
on thin dielectrics. However, at the same time, if this type of MoS2 deposition is to be used for device fabrication, the simultaneous
increase of the SiO2 thickness makes it important to have
proper knowledge and control of the growth process. For the applications
in energy harvesting where only a thin (or none) insulating layer
is required, alternative growth protocols, surface passivation, or
a different dielectric material (e.g., Al2O3) are suggested.
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Verhagen, Tim; Rodriguez, Alvaro; Vondráček, Martin; Honolka, Jan; Funke, Sebastian; Zlámalová, Magda; et al. (2020). Chemical Vapor Deposition of MoS2 for Energy
Harvesting: Evolution of the Interfacial Oxide Layer. ACS Publications. Collection. https://doi.org/10.1021/acsanm.0c01028
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AUTHORS (10)
TV
Tim Verhagen
AR
Alvaro Rodriguez
MV
Martin Vondráček
JH
Jan Honolka
SF
Sebastian Funke
MZ
Magda Zlámalová
LK
Ladislav Kavan
MK
Martin Kalbac
JV
Jana Vejpravova
OF
Otakar Frank
KEYWORDS
micrometer scale resolutionalternative growth protocolsInterfacial Oxide LayermaterialSiO 2 thicknessMoS 2 depositionMoS 2 growth processeschemical vapor depositiontip-enhanced photoluminescence spectroscopyMoS 2SiO 2 surfaceoxide layer thicknessMoS 2 flakesas-grown MoS 2dielectric interface layerdevice fabricationspectroscopic imaging ellipsometryCVDchemical Vapor DepositionX-ray photoelectron spectroscopyphotoelectron microspectroscopy methods