Bilayer
Lateral Heterostructures of Transition-Metal
Dichalcogenides and Their Optoelectronic Response
Posted on 2019-09-23 - 18:44
Two-dimensional
lateral heterojunctions based on monolayer transition-metal
dichalcogenides (TMDs) have received increasing attention given that
their direct band gap makes them very attractive for optoelectronic
applications. Although bilayer TMDs present an indirect band gap,
their electrical properties are expected to be less susceptible to
ambient conditions, with higher mobilities and density of states when
compared to monolayers. Bilayers and few-layers single domain devices
have already demonstrated higher performance in radio frequency and
photosensing applications. Despite these advantages, lateral heterostructures
based on bilayer domains have been less explored. Here, we report
the controlled synthesis of multi-junction bilayer lateral heterostructures
based on MoS2-WS2 and MoSe2-WSe2 monodomains. The heterojunctions are created via sequential lateral edge-epitaxy that happens simultaneously in both
the first and the second layers. A phenomenological mechanism is proposed
to explain the growth mode with self-limited thickness that happens
within a certain window of growth conditions. With respect to their
as-grown monolayer counterparts, bilayer lateral heterostructures
yield nearly 1 order of magnitude higher rectification currents. They
also display a clear photovoltaic response, with short circuit currents
∼103 times larger than those extracted from the
as-grown monolayers, in addition to room-temperature electroluminescence.
The improved performance of bilayer heterostructures significantly
expands the potential of two-dimensional materials for optoelectronics.
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Sahoo, Prasana Kumar; Memaran, Shahriar; Nugera, Florence Ann; Xin, Yan; Díaz Márquez, Tania; Lu, Zhengguang; et al. (2019). Bilayer
Lateral Heterostructures of Transition-Metal
Dichalcogenides and Their Optoelectronic Response. ACS Publications. Collection. https://doi.org/10.1021/acsnano.9b04957