Atomic Plane Misorientation
Assisted Crystalline Quality
Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire
(0001) Surface for Deep Ultraviolet Photoelectric Devices
Posted on 2023-03-09 - 19:35
The atomic-layer misorientation during the growth of
a 5 μm
thick AlN thin film on a patterned (0001) sapphire substrate was investigated
by the scan rotation approach using a probe aberration-corrected scanning
transmission electron microscope at a nanometer scale. Through the
geometrical phase analysis of the resulting twisted atomic structure
at different depths below the top surface, it is shown that over 10%
of local tensile and compressive strain is balanced in a 1.6°
twist of the c-planes within the first micron of
AlN growth. As a consequence, the formation of threading dislocations
is reduced. The in-plane twist is seen to decrease toward the layer
surface down to 0.5°. Finally, growth has adopted the conventional
step flow mechanism with a reduced density of emerging dislocations
by the thickness of 5 μm. Our finding forecasts the possibility
of understanding the relationship between atomic bilayer twist and
local strain accommodation at a nanometer scale, which could provide
guidance for achieving better crystal quality of AlN thin films on
patterned substrates during epitaxy.
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Deng, Yong; Xie, Nan; Hu, Wenyu; Ma, Zhenyu; Xu, Fujun; Chen, Longqing; et al. (2023). Atomic Plane Misorientation
Assisted Crystalline Quality
Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire
(0001) Surface for Deep Ultraviolet Photoelectric Devices. ACS Publications. Collection. https://doi.org/10.1021/acsanm.2c05372
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AUTHORS (20)
YD
Yong Deng
NX
Nan Xie
WH
Wenyu Hu
ZM
Zhenyu Ma
FX
Fujun Xu
LC
Longqing Chen
WQ
Wenbin Qiu
LZ
Lin Zhao
HT
Hong Tao
BW
Bo Wu
YH
Yi Huang
JM
Jian Ma
XW
Xiaoyi Wang
XZ
Xuqi Zhang
YQ
Yang Qiu
XC
Xudong Cui
CJ
Chaoyuan Jin
MC
Marie-Pierre Chauvat
PR
Pierre Ruterana
TW
Thomas Walther
KEYWORDS
geometrical phase analysiscould provide guidance>- planes within6 ° twistlocal strain accommodationaln thin filmsatomic bilayer twistplane twistlocal tensilecompressive strainthreading dislocationssapphire substrateprobe aberrationnanopatterned sapphirenanometer scalelayer misorientationfirst micronfinding forecastsemerging dislocationsdifferent depthsdecrease towardc 5 μm5 °.