Atomic Layer Deposition of PbS Thin Films at Low Temperatures
Posted on 2020-09-16 - 14:07
Atomic layer deposition (ALD) is
a viable method for depositing
functional, passivating, and encapsulating layers on top of halide
perovskites. Studies in that area have only focused on metal oxides,
despite a great number of materials that can be made with ALD. This
work demonstrates that, in addition to oxides, other ALD processes
can be compatible with the perovskites. We describe two new ALD processes
for lead sulfide. These processes operate at low deposition temperatures
(45–155 °C) that have been inaccessible to previous ALD
PbS processes. Our processes rely on volatile and reactive lead precursors
Pb(dbda) (dbda = rac-N2,N3-di-tert-butylbutane-2,3-diamide)
and Pb(btsa)2 (btsa = bis(trimethylsilyl)amide) as well
as H2S. These precursors produce high quality PbS thin
films that are uniform, crystalline, and pure. The films exhibit p-type
conductivity and good mobilities of 10–70 cm2 V–1 s–1. Low deposition temperatures
enable direct ALD of PbS onto a halide perovskite CH3NH3PbI3 (MAPI) without its decomposition. The stability
of MAPI in ambient air is greatly improved by capping with ALD PbS.
More generally, these new processes offer valuable alternatives for
PbS-based devices, and we hope that this study will inspire more studies
on ALD of non-oxides on halide perovskites.
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Popov, Georgi; Bačić, Goran; Mattinen, Miika; Manner, Toni; Lindström, Hannu; Seppänen, Heli; et al. (2020). Atomic Layer Deposition of PbS Thin Films at Low Temperatures. ACS Publications. Collection. https://doi.org/10.1021/acs.chemmater.0c01887
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AUTHORS (16)
GP
Georgi Popov
GB
Goran Bačić
MM
Miika Mattinen
TM
Toni Manner
HL
Hannu Lindström
HS
Heli Seppänen
SS
Sami Suihkonen
MV
Marko Vehkamäki
MK
Marianna Kemell
PJ
Pasi Jalkanen
KM
Kenichiro Mizohata
JR
Jyrki Räisänen
ML
Markku Leskelä
HK
Hanna Maarit Koivula
SB
Seán T. Barry
MR
Mikko Ritala