posted on 2023-12-13, 08:29authored byArthur
F. Lipinski, Christopher W. Lambert, Achyut Maity, William R. Hendren, Paul R. Edwards, Robert W. Martin, Robert M. Bowman
Titanium nitride
(TiN) has emerged as a highly promising alternative
to traditional plasmonic materials. This study focuses on the inclusion
of a Cr90Ru10 buffer layer between the substrate
and thin TiN film, which enables the use of cost-effective, amorphous
technical substrates while preserving high film quality. We report
best-in-class TiN thin films fabricated on fused silica wafers, achieving
a maximum plasmonic figure of merit, −ϵ′/ϵ″,
of approximately 2.8, even at a modest wafer temperature of around
300 °C. Furthermore, we delve into the characterization of TiN
thin film quality and fabricated TiN triangular nanostructures, employing
attenuated total reflectance and cathodoluminescence techniques to
highlight their potential applications in surface plasmonics.