posted on 2023-11-16, 13:20authored byOfelia Durante, Kimberly Intonti, Loredana Viscardi, Sebastiano De Stefano, Enver Faella, Arun Kumar, Aniello Pelella, Francesco Romeo, Filippo Giubileo, Manal Safar G. Alghamdi, Mohammed Ali S. Alshehri, Monica F Craciun, Saverio Russo, Antonio Di Bartolomeo
Two-dimensional rhenium
disulfide (ReS2), a member of
the transition-metal dichalcogenide family, has received significant
attention due to its potential applications in field-effect transistors
(FETs), photodetectors, and memories. In this work, we investigate
the suppression of the subthreshold current during the forward voltage
gate sweep, leading to an inversion of the hysteresis in the transfer
characteristics of ReS2 nanosheet-based FETs from clockwise
to anticlockwise. We explore the impact of temperature, sweeping gate
voltage, and pressure on this behavior. Notably, the suppression in
current within the subthreshold region coincides with a peak in gate
current, which increases beyond a specific temperature but remains
unaffected by pressure. We attribute both the suppression in drain
current and the presence of peak in gate current to the charge/discharge
process of gate oxide traps by thermal-assisted tunnelling. The suppression
of the subthreshold current at high temperatures not only reduces
power consumption but also extends the operational temperature range
of ReS2 nanosheet-based FETs.