posted on 2021-10-22, 13:34authored byJin Hee Lee, Woong Bae Jeon, Jong Sung Moon, Junghyun Lee, Sang-Wook Han, Zoltán Bodrog, Adam Gali, Sang-Yun Lee, Je-Hyung Kim
Crystallographic
defects such as vacancies and stacking faults
engineer electronic band structure at the atomic level and create
zero- and two-dimensional quantum structures in crystals. The combination
of these point and planar defects can generate a new type of defect
complex system. Here, we investigate silicon carbide nanowires that
host point defects near stacking faults. These point–planar
defect complexes in the nanowire exhibit outstanding optical properties
of high-brightness single photons (>360 kcounts/s), a fast recombination
time (<1 ns), and a high Debye–Waller factor (>50%).
These
distinct optical properties of coupled point-planar defects lead to
an unusually strong zero-phonon transition, essential for achieving
highly efficient quantum interactions between multiple qubits. Our
findings can be extended to other defects in various materials and
therefore offer a new perspective for engineering defect qubits.