posted on 2021-03-11, 18:36authored byGregory M. Stephen, Aubrey T. Hanbicki, Timo Schumann, Jeremy T. Robinson, Manik Goyal, Susanne Stemmer, Adam L. Friedman
As
the need for ever greater transistor density increases, the
commensurate decrease in device size approaches the atomic limit,
leading to increased energy loss and leakage currents, reducing energy
efficiencies. Alternative state variables, such as electronic spin
rather than electronic charge, have the potential to enable more energy-efficient
and higher performance devices. These spintronic devices require materials
capable of efficiently harnessing the electron spin. Here we show
robust spin transport in Cd3As2 films up to
room temperature. We demonstrate a nonlocal spin valve switch from
this material, as well as inverse spin Hall effect measurements yielding
spin Hall angles as high as θSH = 1.5 and spin diffusion
lengths of 10–40 μm. Long spin-coherence lengths with
efficient charge-to-spin conversion rates and coherent spin transport
up to room temperature, as we show here in Cd3As2, are enabling steps toward realizing actual spintronic devices.