posted on 2024-01-22, 14:33authored byMinghao Shao, Houfang Liu, Ri He, Xiaomei Li, Liang Wu, Ji Ma, Chen Ye, Xiangchen Hu, Ruiting Zhao, Zhicheng Zhong, Yi Yu, Caihua Wan, Yi Yang, Ce-Wen Nan, Xuedong Bai, Tian-Ling Ren, X. Renshaw Wang
Ferroelectricity, especially the Si-compatible type recently
observed
in hafnia-based materials, is technologically useful for modern memory
and logic applications, but it is challenging to differentiate intrinsic
ferroelectric polarization from the polar phase and oxygen vacancy.
Here, we report electrically controllable ferroelectricity in a Hf0.5Zr0.5O2-based heterostructure with
Sr-doped LaMnO3, a mixed ionic–electronic conductor,
as an electrode. Electrically reversible extraction and insertion
of an oxygen vacancy into Hf0.5Zr0.5O2 are macroscopically characterized and atomically imaged in situ. Utilizing this reversible process, we achieved
multilevel polarization states modulated by the electric field. Our
study demonstrates the usefulness of the mixed conductor to repair,
create, manipulate, and utilize advanced ferroelectric functionality.
Furthermore, the programmed ferroelectric heterostructures with Si-compatible
doped hafnia are desirable for the development of future ferroelectric
electronics.