posted on 2024-01-10, 19:40authored byAmeen
Uddin Ammar, Adriana Popa, Dana Toloman, Sergiu Macavei, Alexandra Ciorita, Amelia-Elena Bocirnea, Manuela Stan, Emre Erdem, Arpad Mihai Rostas
The
effect of the annealing temperature on 1% nitrogen-doped WO3 materials was studied, which were then used as electrode
materials for high-performance supercapacitor (SC) devices. The supercapacitive
performance of the proposed materials was strongly influenced by the
doping element and the annealing temperature by directly changing
the defect structure of the host material. The 1% N-doped WO3 materials annealed at different temperatures were thoroughly characterized
through various characterization techniques, including electron paramagnetic
resonance and photoluminescence spectroscopy, giving insight into
the effect of N-doping on the defect structure and optical properties
of WO3. When the WO3:N materials were used as
electrode material in symmetric SCs, the doping element and the annealing
temperature improved the electrochemical performance. No booster materials
(such as carbon black) were used in the symmetric SC designs, showing
increased specific capacitance (102 F/g) and energy density (14.6
W h/kg) values.