posted on 2024-03-01, 22:03authored byMingnan Liu, Shuangsuo Mao, Jiajia Qin, Yusheng Yang, Zhaowei Rao, Wei Lin, Yulong Yang, Yong Zhao, Bai Sun
Perovskite semiconductors, as an emerging material, have
gained
widespread attention in the preparation of memristor devices with
resistive switching (RS) behavior due to their excellent properties,
such as ion migration, adjustable bandgap, and high OFF/ON ratio.
The negative differential resistance (NDR) effect-coupled RS behavior
has important prospects for the preparation of multifunctional devices
due to its potential to break the limitations of Moore’s law.
In this work, the La0.7Sr0.3MnO3 films
with different nanoscale thicknesses were prepared on fluorine-doped
SnO2 (FTO) substrates by the radio frequency (RF) magnetron
sputtering method as a functional layer of the memristor device. The
Ag/La0.7Sr0.3MnO3/FTO memristor device
achieves bipolar RS behavior with both nonvolatile memory and NDR
effect, and the NDR-coupled RS effect can be successfully regulated
by the functional layer thickness and bias voltage range. The conduction
mechanism of the NDR-coupled RS phenomenon in the device can be explained
by the formation and fracture of metal ion oxygen vacancy (V02+) conduction paths inside the
functional layer. This work provides an important avenue for understanding
the multiple physical mechanisms in memristor devices.