posted on 2023-11-10, 16:03authored byHojoon Ryu, Junzhe Kang, Minseong Park, Byungjoon Bae, Zijing Zhao, Shaloo Rakheja, Kyusang Lee, Wenjuan Zhu
In
this paper, we demonstrate low-thermal-budget ferroelectric
field-effect transistors (FeFETs) based on the two-dimensional ferroelectric
CuInP2S6 (CIPS) and oxide semiconductor InZnO
(IZO). The CIPS/IZO FeFETs exhibit nonvolatile memory windows of ∼1
V, low off-state drain currents, and high carrier mobilities. The
ferroelectric CIPS layer serves a dual purpose by providing electrostatic
doping in IZO and acting as a passivation layer for the IZO channel.
We also investigate the CIPS/IZO FeFETs as artificial synaptic devices
for neural networks. The CIPS/IZO synapse demonstrates a sizable dynamic
ratio (125) and maintains stable multilevel states. Neural networks
based on CIPS/IZO FeFETs achieve an accuracy rate of over 80% in recognizing
MNIST handwritten digits. These ferroelectric transistors can be vertically
stacked on silicon complementary metal-oxide semiconductor (CMOS)
with a low thermal budget, offering broad applications in CMOS+X technologies
and energy-efficient 3D neural networks.