Hybrid
chemical vapor deposition (CVD) is an industrially
relevant
thin-film deposition method and has demonstrated great advantages
in large-area uniform perovskite film preparation. However, perovskite
solar cells prepared by hybrid CVD suffer from low power conversion
efficiency compared to those deposited by the solution methods. Herein,
the origin of the efficiency gaps between hybrid CVD and solution
methods is systematically investigated. Optical and electrical characterizations
indicated a severe nonradiative recombination loss on the hybrid CVD-prepared
perovskite. X-ray photoelectron spectroscopy and thermal admittance
spectroscopy measurements revealed the iodine-rich surface and higher
density of deep-level defects (i.e., IPb and VPb) of hybrid CVD-prepared perovskite,
which shorten the carrier lifetime via Shockley–Read–Hall
recombination. These deep-level defects facilitate the migration of
ions under bias, posing a concern for device operational stability.
The fundamental understanding could pave the way for the advancement
of hybrid CVD methods from a defect engineering perspective.