posted on 2023-11-21, 10:13authored byShin-Ho Noh, Hyo-Eun Kim, Young Ha Kwon, Nak-Jin Seong, Kyujeong Choi, Chi-Sun Hwang, Gyu-Ho Han, Seung-Yeon Sung, Goo-Eun Jung, Sung Min Yoon
Vertical-channel thin-film transistors (VTFTs), featured
to uniquely
employ the In–Ga–Sn–O (IGTO)-active channel layers
prepared by atomic layer deposition, were fabricated with a channel
length (Lch) as short as 150 nm and characterized
in terms of the short-channel effect (SCE) and operational reliability.
All the fabricated devices exhibited sound and stable operations,
including durability against SCEs, such as negligible DIBL effects,
even for the nanoscale regime in Lch.
The IGTO VTFT fabricated with a channel cationic composition (In/Ga/Sn)
of 3.8:3.9:1.0 was examined to exhibit excellent device characteristics
such as a current drivability (CDR) of
32.2 μA/μm and an on/off current ratio as high as 108. The threshold voltage shift (ΔVTH) representing the positive bias-stress (PBS) stability was
secured as low as +0.87 V at a bias stress field of 2 MV/cm for 10,000
s. The ΔVTH values of the IGTO VTFTs
were noticeably found to decrease with increasing In compositions
in the IGTO channels, showing more robust PBS stability. Feasible
scenario for the improvement in the PBS instability for the IGTO VTFT
was elucidated by analysis on the correlations between the bulk-trap
density and the cationic composition in the ALD IGTO channel. The
composition-dependent PBS instabilities were also suggested to be
markedly influenced by the magnitude of the bias-stress field owing
to the generation of Sn–O weak bonds in the IGTO channel and
donation of free carriers during PBS. These obtained insights could
provide a beneficial design scheme for improving the PBS instability
determined by the structural disadvantages, leading to balancing CDR with the bias-stress stability of the VTFTs,
even when Lch was vertically scaled down
to 150 nm.