posted on 2024-02-09, 05:03authored byUjjal Das, Pranab Kumar Sarkar, Sachin Kumar Sharma, Rajesh Deb, Romy Garg, Bhanu Prakash, Kaushik Parida, Asim Roy
Stability and performance retention are the two basic
issues associated
with halide perovskite-based electronic devices, and various efforts
have been adopted to resolve these. A novel and one-step approach
is lacking to enhance the device performance along with stability.
Herein, we have cross-linked an organic–inorganic hybrid halide
perovskite (FAPbBr3) with a graphene sheet, and the composite
system is applied as a functional matrix in a resistive memory device.
In situ synthesis of the graphene–perovskite composite enabled
strong interaction between the two-dimensional graphene sheets and
three-dimensional perovskite, which not only provided a moisture barrier
to the surface of the perovskite but also enhanced the charge transport.
X-ray photoelectron spectroscopy manifested the robust H2O resistance of the perovskite in the presence of graphene, and substantial
stability of the composite system-based device could be observed after
15 days of ambient storage. Strong photoluminescence quenching in
the case of the graphene–perovskite composite system signified
the additional energy transfer channel for effective charge transport.
This enhanced charge transfer observed in the graphene–perovskite
composite system enabled improvement in switching the speed (SET,
from 480 to 190 ns) of the memory device.