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Electron-Beam-Driven Structure Evolution of Single-Layer MoTe2 for Quantum Devices
journal contribution
posted on 2019-04-26, 00:00 authored by Tibor Lehnert, Mahdi Ghorbani-Asl, Janis Köster, Zhongbo Lee, Arkady V. Krasheninnikov, Ute KaiserThe 40 kV high-resolution
transmission electron microscopy (TEM)
experiments are performed to understand defect formation and evolution
of their atomic structure in single-layer 2H MoTe2 under
electron beam irradiation. We show that Te vacancies can agglomerate
either in single Te vacancy lines or in extended defects composed
of column Te vacancies, including rotational trefoil-like defects,
with some of them being never reported before. The formation of inversion
domains with mirror twin boundaries of different types, along with
the islands of the metallic T′ phase was also observed. Our
first-principles calculations provide insights into the energetics
of the transformations as well as the electronic structure of the
system with defects and point out that some of the observed defects
have localized magnetic moments. Our results indicate that various
nanoscale structures, including metallic quantum dots consisting of
T′ phase islands and one-dimensional metallic quantum systems
such as vacancy lines and mirror twin boundaries embedded into a semiconducting
host material can be realized in single-layer 2H MoTe2,
and defect-associated magnetism can also be added, which may allow
prospective control of optical and electronic properties of two-dimensional
materials.
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Keywords
40 kVcolumn Te vacanciesQuantum Devicesvacancy lineselectron beam irradiationnanoscale structuresTe vacancy linesTEMquantum systemsquantum dotsinversion domainsdefect-associated magnetismTe vacanciesSingle-Layer MoTe 2trefoil-like defectsphasetransmission electron microscopyfirst-principles calculationssingle-layer 2 H MoTe 2semiconducting host materialElectron-Beam-Driven Structure Evolutiondefect formation
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