Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

Robinson, Joshua A.; Wetherington, Maxwell; Tedesco, Joseph L.; Campbell, Paul M.; Weng, Xiaojun; Stitt, Joseph; Fanton, Mark A.; Frantz, Eric; Snyder, David; VanMil, Brenda L.; Jernigan, Glenn G.; Myers-Ward, Rachael L.; Eddy, Charles R.; Gaskill, D. Kurt

doi:10.1021/nl901073g.s001

nl901073g_si_001.pdf (606.31 kB)

Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

journal contribution

posted on 2009-08-12, 00:00 authored by Joshua A. Robinson, Maxwell Wetherington, Joseph L. Tedesco, Paul M. Campbell, Xiaojun Weng, Joseph Stitt, Mark A. Fanton, Eric Frantz, David Snyder, Brenda L. VanMil, Glenn G. Jernigan, Rachael L. Myers-Ward, Charles R. Eddy, D. Kurt Gaskill

We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on SiC(0001) is highly dependent on thickness and monolayer strain uniformity. Additionally, we achieve high mobility epitaxial graphene (18100 cm²/(V s) at room temperature) on SiC(0001̅) and show that carrier mobility depends strongly on the graphene layer stacking.