posted on 2024-01-19, 01:05authored byNiklas Lettner, Lukas Antoniuk, Anna P. Ovvyan, Helge Gehring, Daniel Wendland, Viatcheslav N. Agafonov, Wolfram H. P. Pernice, Alexander Kubanek
Nanophotonic quantum
devices can significantly boost
light–matter
interaction, which is important for applications such as quantum networks.
Reaching a high interaction strength between an optical transition
of a spin system and a single mode of light is an essential step that
demands precise control over all degrees of freedom of the optical
coupling. While current devices have reached a high accuracy of emitter
positioning, the placement process remains overall statistically,
reducing the device fabrication yield. Furthermore, not all degrees
of freedom of the optical coupling can be controlled, limiting the
device performance. Here, we develop a hybrid approach based on negatively
charged silicon vacancy center in nanodiamonds coupled to a mode of
a Si3N4-photonic crystal cavity, where all terms
of the coupling strength can be controlled individually. We used the
frequency of coherent Rabi oscillations and line-broadening as a measure
of the device performance. This allows for iterative optimization
of the position and rotation of the dipole with respect to individual
preselected modes of light. Therefore, our work marks an important
step for optimization of hybrid quantum photonics and enables us to
align device simulations with real device performance.