In our study, we
introduce a novel concept concerning the formation
of oxygen vacancies at varying temperatures during oxide skin formation
in liquid metal. Specifically, by adjusting the 2D-InOx printing temperatures, we successfully regulated
the concentration of specific defects, unveiling a decrease in oxygen
vacancies at higher printing temperatures. Employing a comprehensive
suite of analytical techniques, we present a swift and efficient method
for producing 2D-InOx while simultaneously
evaluating its internal defect content at both the macroscopic and
microscopic levels. Furthermore, we employed electron energy loss
spectroscopy (EELS) scans in the proximity of grain boundaries, enabling
us to effectively probe the fluctuation in oxygen vacancy concentration
between these boundaries and the interior of the grains. Our findings
underscore a notable accumulation of oxygen vacancies at these grain
boundaries. Notably, our capacity to manipulate defect concentration
through temperature adjustments enhances the significance of our investigation,
offering valuable insights into 2D memristor materials and their potential
role in the development of memory devices based on 2D-InOx.