posted on 2023-12-08, 14:06authored byXiaomin Fu, Chao Jia, Li Sheng, Qunxiang Li, Jinlong Yang, Xingxing Li
The realization of the electrical control of spin is
highly desirable.
One promising approach is by regulating the Rashba spin–orbit
coupling effect of materials through external electric fields. However,
this method requires materials to possess either a high electric field
response and a large Rashba constant or the simultaneous presence
of Rashba splitting and ferroelectric polarization. These stringent
requirements result in a scarcity of suitable materials. In order
to surpass these limitations and exploit a new prospect for spin manipulation
via the Rashba effect, a conceptual class of materials named bipolar
Rashba semiconductors (BRS) is proposed, whose valence band and conduction
band possess opposite spin texture directions when approaching the
Fermi level. The unique electronic structure of BRS makes it feasible
to reverse the spin precession by simply applying a gate voltage.
The existence of BRS is confirmed through first-principles calculations
on the two-dimensional (2D) material AlBiS3.