posted on 2023-11-13, 19:38authored byBogyeom Seo, Jusung Chung, Naresh Eedugurala, Jason D. Azoulay, Hyun Jae Kim, Tse Nga Ng
Photodetectors operating across the
short-wave infrared region
are essential elements of modern optoelectronic technologies. This
work demonstrates the integration of an organic bulk heterojunction
polymer layer on an oxide thin-film transistor to achieve a peak infrared
photoresponse at 1550 nm. As the efficiency of organic semiconductors
decreases at longer wavelengths, the phototransistor structure uses
trap-assisted charge injection to enhance the photoresponse. This
work optimizes the detector performance by investigating the balance
between bias stress and signal-to-noise under different bias conditions,
enabling a responsivity at 1550 nm up to 130 mA/W at a low light intensity
of 2.5 × 10–5 W/cm2.