posted on 2021-10-12, 18:33authored byTing Lei, Huayao Tu, Weiming Lv, Haixin Ma, Jiachen Wang, Rui Hu, Qilitai Wang, Like Zhang, Bin Fang, Zhongyuan Liu, Wenhua Shi, Zhongming Zeng
Ambipolar
photoresponsivity mainly originates from intrinsic or
interfacial defects. However, these defects are difficult to control
and will prolong the response speed of the photodetector. Here, we
demonstrate tunable ambipolar photoresponsivity in a photodetector
built from vertical p-WSe2/n-InSe heterostructures with
photogating effect, exhibiting ultrahigh photoresponsivity from −1.76
× 104 to 5.48 × 104 A/W. Moreover,
the photodetector possesses broadband photodetection (365–965
nm), an ultrahigh specific detectivity (D*) of 5.8
× 1013 Jones, an external quantum efficiency of 1.86
× 107%, and a rapid response time of 20.8 ms. The
WSe2/InSe vertical architecture has promising potential
in developing high-performance nano-optoelectronics.