In
the continuous transistor feature size scaling down, the scaling
of the supply voltage is stagnant because of the subthreshold swing
(SS) limit. A transistor with a new mechanism is needed to break through
the thermionic limit of SS and hold the large drive current at the
same time. Here, by adopting the recently proposed Dirac-source field-effect
transistor (DSFET) technology, we experimentally demonstrate a MoS2/graphene (1.8 nm/0.3 nm) DSFET for the first time, and a
steep SS of 37.9 mV/dec at room temperature with nearly free hysteresis
is observed. Besides, by bringing in the structure of gate-all-around
(GAA), the MoS2/graphene DSFET exhibits a steeper SS of
33.5 mV/dec and a 40% increased normalized drive current up to 52.7
μA·μm/μm (VDS =
1 V) with a current on/off ratio of 108, which shows potential
for low-power and high-performance electronics applications.