posted on 2022-01-25, 14:03authored byZhaohao Zhang, Yanna Luo, Yan Cui, Hong Yang, Qingzhu Zhang, Gaobo Xu, Zhenhua Wu, Jinjuan Xiang, Qianqian Liu, Huaxiang Yin, Shujuan Mao, Xiaolei Wang, Junjie Li, Yongkui Zhang, Qing Luo, Jianfeng Gao, Wenjuan Xiong, Jinbiao Liu, Yongliang Li, Junfeng Li, Jun Luo, Wenwu Wang
Nonvolatile
logic devices are crucial for the development of logic-in-memory
(LiM) technology to build the next-generation non-von Neumann computing
architecture. Ferroelectric field-effect transistors (Fe FET) are
one of the most promising candidates for LiMs because of high compatibility
with mainstream silicon-based complementary metal-oxide semiconductor
processes, nonvolatile memory, and low power consumption. However,
because of the unipolar characteristics of a Fe FET, a nonlinear XOR
or XNOR logic gate function is difficult to realize with a single
device. In addition, because single Fe polarization switch modulation
is available in the devices, a reconfigurable logic gate usually needs
multiple devices to construct and realize fewer logic functions. Here,
we introduced polarization-switching (PS) and charge-trapping (CT)
effects in a single Fe FET and fabricated a multi-field-effect transistor
with bipolar-like characteristics based on advanced 10 nm node fin
field-effect transistors (PS-CT FinFET) with 9 nm thick Hf0.5Zr0.5O2 films. The special hybrid effects of
charge-trapping and polarization-switching enabled eight Boolean logic
functions with a single PS-CT FinFET and 16 Boolean logic functions
with two complementary PS-CT FinFETs were obtained with three operations.
Furthermore, reconfigurable full 1 bit adder and subtractor functions
were demonstrated by connecting only two n-type and
two p-type PS-CT FinFET devices, indicating that
the technology was promising for LiM applications.