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MTG_Trans_TR_2015.pdf (1.29 MB)

Electrical Analysis of High Dielectric Constant Insulator and Metal Gate Metal Oxide Semiconductor Capacitors on Flexible Bulk Mono-Crystalline Silicon

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journal contribution
posted on 2017-05-30, 04:04 authored by Mohamed GhoneimMohamed Ghoneim
We report on the electrical study of high dielectric constant insulator and metal gate
metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon
fabric which is peeled off using a CMOS compatible process from a standard bulk mono-
crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the
ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The
obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime ...

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