Ultra low dielectric constant (k 1⁄4 1.53) materials with self-cleansing properties were synthesized via
incorporation of fluorodecyl-polyhedral oligomeric silsesquioxane (FD-POSS) into recently synthesized
perfluorocyclopentenyl (PFCP) aryl ether polymers. Incorporation of fluorine rich, high free volume, and
low surface energy POSS into a semifluorinated PFCP polymer matrix at various weight percentages
resulted in a dramatic drop in dielectric constant, as well as a significant increase in hydrophobicity and
oleophobicity of the system. These ultra-low dielectric self-cleansing materials (qtilt 1⁄4 38) were
fabricated into electrospun mats from a solvent blend of fluorinated FD-POSS with PFCP polymers.