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2-nm-Thick Indium Oxide Featuring High Mobility
journal contributionposted on 2023-05-15, 06:15 authored by CK Nguyen, A Mazumder, ELH Mayes, V Krishnamurthi, A Zavabeti, BJ Murdoch, X Guo, P Aukarasereenont, A Dubey, A Jannat, X Wei, VK Truong, L Bao, A Roberts, Chris McConvilleChris McConville, S Walia, N Syed, T Daeneke
Thin film transistors (TFTs) are key components for the fabrication of electronic and optoelectronic devices, resulting in a push for the wider exploration of semiconducting materials and cost-effective synthesis processes. In this report, a simple approach is proposed to achieve 2-nm-thick indium oxide nanosheets from liquid metal surfaces by employing a squeeze printing technique and thermal annealing at 250 °C in air. The resulting materials exhibit a high degree of transparency (>99 %) and an excellent electron mobility of ≈96 cm2 V−1 s−1, surpassing that of pristine printed 2D In2O3 and many other reported 2D semiconductors. UV-detectors based on annealed 2D In2O3 also benefit from this process step, with the photoresponsivity reaching 5.2 × 104 and 9.4 × 103 A W−1 at the wavelengths of 285 and 365 nm, respectively. These values are an order of magnitude higher than for as-synthesized 2D In2O3. Utilizing transmission electron microscopy with in situ annealing, it is demonstrated that the improvement in device performances is due to nanostructural changes within the oxide layers during annealing process. This work highlights a facile and ambient air compatible method for fabricating high-quality semiconducting oxides, which will find application in emerging transparent electronics and optoelectronics.
JournalAdvanced Materials Interfaces
Publication classificationC1 Refereed article in a scholarly journal
Science & TechnologyPhysical SciencesTechnologyChemistry, MultidisciplinaryMaterials Science, MultidisciplinaryChemistryMaterials Science2Dindium oxideliquid metalsoptoelectronicsthin film transistors (TFTs)transistorsTHIN-FILMELECTRICAL-PROPERTIESIN2O3Materials Engineering not elsewhere classifiedPhysical Chemistry not elsewhere classified