The present single-ionization cross section of Sn^{5 +} compared to the results of the present CADW calculations

Figure 3. The present single-ionization cross section of Sn^{5 +} compared to the results of the present CADW calculations. Same notation as in figure 2. The dark-shaded area at the bottom of the graph represents the total ionization contribution of the 4d⁸5s excited-ion-beam component with the estimated fraction of 14%.

Abstract

Electron-impact single-ionization cross sections of Sn^{q +} ions in charge states q = 4–13 with 4d^{[10 − (q − 4)]} outer-shell configurations have been studied in the energy range from the corresponding thresholds up to 1000 eV. Absolute cross sections and fine-step energy-scan data have been measured employing the crossed-beams technique. Contributions of different ionization mechanisms have been analysed by comparing the experimental data with calculations employing the configuration-averaged distorted wave approximation. Ionization plasma rate coefficients inferred from the experimental data are also presented.