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Thermodynamic Studies of β‑Ga2O3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate
journal contribution
posted on 2017-11-09, 09:13 authored by Hong Zhou, Kerry Maize, Jinhyun Noh, Ali Shakouri, Peide D. YeThe self-heating effect is a severe
issue for high-power semiconductor
devices, which degrades the electron mobility and saturation velocity,
and also affects the device reliability. On applying an ultrafast
and high-resolution thermoreflectance imaging technique, the direct
self-heating effect and surface temperature increase phenomenon are
observed on novel top-gate β-Ga2O3 on
insulator field-effect transistors. Here, we demonstrate that by utilizing
a higher thermal conductivity sapphire substrate rather than a SiO2/Si substrate, the temperature rise above room temperature
of β-Ga2O3 on the insulator field-effect
transistor can be reduced by a factor of 3 and thereby the self-heating
effect is significantly reduced. Both thermoreflectance characterization
and simulation verify that the thermal resistance on the sapphire
substrate is less than 1/3 of that on the SiO2/Si substrate.
Therefore, maximum drain current density of 535 mA/mm is achieved
on the sapphire substrate, which is 70% higher than that on the SiO2/Si substrate due to reduced self-heating. Integration of
β-Ga2O3 channel on a higher thermal conductivity
substrate opens a new route to address the low thermal conductivity
issue of β-Ga2O3 for power electronics
applications.
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Keywords
thermoreflectance imaging techniquenovel top-gate β- Ga 2 O 3β- Ga 2 O 3 channelinsulator field-effect transistorpower electronics applicationsβ- Ga 2 O 3Siself-heating effectsapphire substratesurface temperature increase phenomenonSiOconductivity sapphire substrateinsulator field-effect transistors
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