nn7b07911_si_001.pdf (629.28 kB)
Room-Temperature Lasing from Monolithically Integrated GaAs Microdisks on Silicon
journal contribution
posted on 2018-01-24, 00:00 authored by Stephan Wirths, Benedikt F. Mayer, Heinz Schmid, Marilyne Sousa, Johannes Gooth, Heike Riel, Kirsten E. MoselundAdditional functionalities on semiconductor
microchips are progressively important in order to keep up with the
ever-increasing demand for more powerful computational systems. Monolithic
III–V integration on Si promises to merge mature Si CMOS processing
technology with III–V semiconductors possessing superior material
properties, e.g., in terms of carrier
mobility or band structure (direct band gap). In particular, Si photonics
would strongly benefit from an integration scheme for active III–V
optoelectronic devices in order to enable low-cost and power-efficient
electronic–photonic integrated circuits. We report on room-temperature
lasing from AlGaAs/GaAs microdisk cavities monolithically integrated
on Si(001) using a selective epitaxial growth technique called template-assisted
selective epitaxy. The grown gain material possesses high optical
quality without indication of threading dislocations, antiphase boundaries,
or twin defects. The devices exhibit single-mode lasing at T < 250 K and lasing thresholds between 2 and 18 pJ/pulse
depending on the cavity size (1–3 μm in diameter).
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devices exhibit single-mode lasingband gapepitaxial growth techniquelasing thresholdsmaterial propertiesgain materialMonolithically Integrated GaAs MicrodisksRoom-Temperature LasingcavitySi CMOS processing technologyband structureintegration schemeSi photonicssemiconductor microchips250 Kcarrier mobilityantiphase boundariesIIIroom-temperature lasing
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