High and Balanced Hole and Electron Mobilities from Ambipolar Thin-Film Transistors Based on Nitrogen-Containing Oligoacences
2010-11-24T00:00:00Z (GMT) by
We demonstrate a strategy for designing high-performance, ambipolar, acene-based field-effect transistor (FET) materials, which is based on the replacement of C−H moieties by nitrogen atoms in oligoacenes. By using this strategy, two organic semiconductors, 6,13-bis(triisopropylsilylethynyl)anthradipyridine (<b>1</b>) and 8,9,10,11-tetrafluoro-6,13-bis(triisopropylsilylethynyl)-1-azapentacene (<b>3</b>), were synthesized and their FET characteristics studied. Both materials exhibit high and balanced hole and electron mobilities, <b>1</b> having μ<sub>h</sub> and μ<sub>e</sub> of 0.11 and 0.15 cm<sup>2</sup>/V·s and <b>3</b> having μ<sub>h</sub> and μ<sub>e</sub> of 0.08 and 0.09 cm<sup>2</sup>/V·s, respectively. The successful demonstration of high and balanced ambipolar FET properties from nitrogen-containing oligoacenes opens up new opportunities for designing high-performance ambipolar organic semiconductors.