sorry, we can't preview this file

...but you can still download Figure 3b.pxp

Figure 3b.pxp (19.05 MB)

Figure 3b.pxp

Download (19.05 MB)
figure
posted on 11.10.2017 by Ben Warner, Toby Gill, Cyrus Hirjibehedin
Comparison of the electronic contrast observed in
experimental (i)-(iv), and simulated (v)-(viii) STM images obtained at +1.0 V, +0.5 V, +0.1
V, and -1.0 V (3.15 nm x 3.15 nm, Iset = 50 pA). Close to the Fermi level, the Si ‘up’ atoms of
the domain boundary are brighter than those in the domain center; far from the Fermi level, all
of the Si atoms have a more uniform appearance and the domain boundaries appear as dark
lines. The simulated constant current STM images correspond to charge density iso-surfaces
of 5 x 10-7 electrons/Å3.

History

Licence

Exports

Logo branding

Licence

Exports