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Fabrication of Sub‑3 nm Feature Size Based on Block Copolymer Self-Assembly for Next-Generation Nanolithography
journal contribution
posted on 2017-08-16, 13:36 authored by Jongheon Kwak, Avnish Kumar Mishra, Jaeyong Lee, Kyu Seong Lee, Chungryong Choi, Sandip Maiti, Mooseong Kim, Jin Kon KimFor
ultrahigh-density storage media and D-RAM, the feature size of lithography
should be much reduced (say less than 10 nm). Though some research
groups reported feature size of 5–6 nm, further reduced feature
size is needed for next-generation lithography. We synthesized, via
a reversible addition–fragmentation chain-transfer polymerization,
polydihydroxystyrene-block-polystyrene (PDHS-b-PS) copolymers showing lamellar and cylindrical microdomains
by adjusting the volume fraction of PS block (fPS). We found that the Flory–Huggins interaction parameter
(χ) between PDHS and PS was very large, 0.7 at 170 °C.
Because of the huge χ, the lamellar domain spacing (L) of PDHS-b-PS with a total molecular
weight of 2.1 kg mol–1 and fPS = 0.5 was only 5.9 nm; thus, a sub-3 nm feature size (half-pitch)
was successfully obtained. Furthermore, PDHS-b-PS
with a molecular weight of 4.2 kg mol–1 and fPS = 0.79 showed hexagonally packed cylinders
with 4 nm diameter. We also obtained thin films of PDHS-b-PS with cylindrical microdomains, showing 8.8 nm center-to-center
spacing. Furthermore, we fabricated ultrahigh-density ZrO2 nanowire arrays from the cylindrical monolayer thin films via atomic
layer deposition, indicating an applicability of PDHS-b-PS for next-generation lithography.