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Deep UV Emission from Highly Ordered AlGaN/AlN Core–Shell Nanorods
journal contribution
posted on 2018-09-06, 00:00 authored by Pierre-Marie Coulon, Gunnar Kusch, Robert W. Martin, Philip A. ShieldsThree-dimensional
core–shell nanostructures could resolve
key problems existing in conventional planar deep UV light-emitting
diode (LED) technology due to their high structural quality, high-quality
nonpolar growth leading to a reduced quantum-confined Stark effect
and their ability to improve light extraction. Currently, a major
hurdle to their implementation in UV LEDs is the difficulty of growing
such nanostructures from AlxGa1–xN materials with a bottom-up approach. In this paper,
we report the successful fabrication of an AlN/AlxGa1–xN/AlN core–shell
structure using an original hybrid top-down/bottom-up approach, thus
representing a breakthrough in applying core–shell architecture
to deep UV emission. Various AlN/AlxGa1–xN/AlN core–shell structures
were grown on optimized AlN nanorod arrays. These were created using
displacement Talbot lithography (DTL), a two-step dry-wet etching
process, and optimized AlN metal organic vapor phase epitaxy regrowth
conditions to achieve the facet recovery of straight and smooth AlN
nonpolar facets, a necessary requirement for subsequent growth. Cathodoluminescence
hyperspectral imaging of the emission characteristics revealed that
229 nm deep UV emission was achieved from the highly uniform array
of core–shell AlN/AlxGa1–xN/AlN structures, which represents the shortest wavelength
achieved so far with a core–shell architecture. This hybrid
top-down/bottom-up approach represents a major advance for the fabrication
of deep UV LEDs based on core–shell nanostructures.
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Deep UV EmissionUV emissionGaDTLoptimized AlN metaldry-wet etching processapproachcoreUV LEDsdisplacement Talbot lithographyAlN nonpolar facetsCathodoluminescence hyperspectral imagingoptimized AlN nanorod arraysvapor phase epitaxy regrowth conditionsUV light-emitting diodequantum-confined Stark effectnanostructure
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