Data for paper: Proton radiation effect on InAs avalanche photodiodes

<p>The files correspond to experimental results in paper: “Proton radiation effect on InAs avalanche photodiodes” <a href="https://doi.org/10.1364/OE.25.002818">DOI: 10.1364/OE.25.002818</a>. </p><p><br></p> <p>There are two types of files:</p> <p>-.PNG, which corresponds to the figures</p> <p>-.CSV, which are raw data in figures</p> <p>The work in this paper mainly focus on the experimental study of proton radiation effects on performance parameters of InAs APDs, whose sensitivity extends from visible light to ~ 3.5 mm. This is the first report demonstrating a comprehensive study of radiation damage effect on InAs APDs.</p> <p>The data consists of pre- and post-radiation results from InAs avalanche photodiodes: dark current, responsivity and avalanche gain. Three irradiation energies (10.0, 31.4, and 58.8 MeV) and four fluences (10<sup>9</sup> to 10<sup>11</sup> p/cm<sup>2</sup>) were tested. At the harshest irradiation condition (10.0 MeV energy and 10<sup>11</sup> p/cm<sup>2</sup> fluence) the APDs’ avalanche gain and leakage current showed a measurable degradation. However, the responsivity of the APDs was unaffected under all conditions tested. </p> <p>More details about these data/figures can be found in README file. </p>